C5909 - Panasonic

C5909 2SC5909

Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maxi.

Features

15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 500 V
• High-speed switching: tf < 200 ns
• Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚
■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge. ed ty Collector-emitter voltage (Base open) VCEO 600 3.3±0.3 (2.0) 5.5±0.3 V sta tinu Emitter-base voltage (Collector op.