Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1700 1700 600 5 30 15 10 100 3.5 150 –55 to +150 Unit V V V V A A .
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
www.DataSheet4U.com
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
5°
1
2
3
2.0
1:Base 2:Collector 3:Emitter TOP
–3E Full Pack Package
s Electrical Characteristics
Parameter Collec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5420 |
Sanyo |
2SC5420 | |
2 | C5422 |
Toshiba Semiconductor |
2SC5422 | |
3 | C5404 |
Toshiba Semiconductor |
2SC5404 | |
4 | C5406 |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
5 | C5406A |
Panasonic |
Silicon NPN triple diffusion mesa type Power Transistors | |
6 | C5407 |
Panasonic |
2SC5407 | |
7 | C5411 |
Toshiba Semiconductor |
2SC5411 | |
8 | C5413 |
Panasonic |
Power Transistors | |
9 | C5416 |
Sanyo |
2SC5416 | |
10 | C5417 |
Sanken electric |
2SC5417 | |
11 | C5418 |
Panasonic Semiconductor |
2SC5418 | |
12 | C5419 |
Panasonic |
Silicon NPN Transistor |