Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features · High gain : S21e2=10dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5375] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Abso.
· High gain : S21e2=10dB typ (f=1GHz).
· High cutoff frequency : fT=5.2GHz typ.
0.425
Package Dimensions
unit:mm 2059B
[2SC5375]
0.3
3
0.15
0.2
0 to 0.1
2.1 1.250
0.425
12 0.65 0.65
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5374 |
Sanyo |
2SC5374 | |
2 | C5376 |
Toshiba |
2SC5376 | |
3 | C5378 |
Panasonic Semiconductor |
2SC5378 | |
4 | C5379 |
Vectron International |
VCXO | |
5 | C5300 |
Vectron International |
VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS | |
6 | C5300 |
Sanyo |
2SC5300 | |
7 | C5301 |
Sanyo Semicon Device |
2SC5301 | |
8 | C5302 |
Sanyo Semicon Device |
2SC5302 | |
9 | C5303 |
Sanyo Semicon Device |
2SC5303 | |
10 | C5305 |
UTC |
2SC5305 | |
11 | C5305D |
Fairchild Semiconductor |
KSC5305D | |
12 | C5307 |
Toshiba |
2SC5307 |