UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE 1 TO-2.
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
* Well controlled storage-time spread for all range of hFE
1
TO-220
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted.)
PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)
* Base Current (DC) Base Current (Pulse)
* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC www.DataSheet4U.com I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5300 |
Vectron International |
VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS | |
2 | C5300 |
Sanyo |
2SC5300 | |
3 | C5301 |
Sanyo Semicon Device |
2SC5301 | |
4 | C5302 |
Sanyo Semicon Device |
2SC5302 | |
5 | C5303 |
Sanyo Semicon Device |
2SC5303 | |
6 | C5305D |
Fairchild Semiconductor |
KSC5305D | |
7 | C5307 |
Toshiba |
2SC5307 | |
8 | C531 |
OKI |
Printer User Guide | |
9 | C5310 |
Vectron International |
VCXO Surface Mount Package Reflow Process Compatible AT-Cut Crystal | |
10 | C5310 |
Sanyo Semicon Device |
2SC5310 | |
11 | C5313 |
Toshiba |
2SC5313 | |
12 | C5315 |
Vectron International |
10 Gbit/s standard Sonet / SDH |