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C5305 - UTC

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C5305 2SC5305

UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE 1 TO-2.

Features


* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications
* Well controlled storage-time spread for all range of hFE 1 TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise noted.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)
* Base Current (DC) Base Current (Pulse)
* Power Dissipation (TC=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC www.DataSheet4U.com I.

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