TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base vo.
Condition
VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Min Typ. Max Unit
― ― 1 µA
― ― 1 µA
400 ―
―
V
80 ― ―
100 ― 300
― 0.4 1.0
V
― 0.7 0.85 V
― 4.0 ― pF
Marking
Part No. (or abbreviation code)
AL
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2004-07-07
Collector current IC (mA)
Common emitter 50 Ta = 25°C 40 30
IC
– VCE
1 mA 900 800 700 600 500
400 300 .
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