C5368 - Toshiba Semiconductor

C5368 2SC5368

2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • • • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High breakdown voltage: VCEO = 450 V High DC current gain: hFE = 20 (min) (IC = 0.2 A) Absolute Maximum Ratings (.

Features

g conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Free Datasheet http://www.Datasheet4U.com 2SC5368 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage D.