·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 .
n Voltage IC= 1mA; IB= 0 B 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 IE= 50μA; IC= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V μA μA Collector Cutoff Current VCB= 160V; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 150 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 20 pF hFE Classifications D 60-120 E 100-200 isc Website: 2 Free Dat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5240 |
Sanyo Semicon Device |
2SC5240 | |
2 | C5241 |
Shindengen Electric |
2SC5241 | |
3 | C5242 |
Toshiba Semiconductor |
2SC5242 | |
4 | C5243 |
Panasonic Semiconductor |
2SC5243 | |
5 | C5244 |
Panasonic Semiconductor |
2SC5244 | |
6 | C5244A |
Panasonic |
2SC5244A | |
7 | C5245 |
Sanyo |
2SC5245 | |
8 | C5247 |
Hitachi Semiconductor |
2SC5247 | |
9 | C5249 |
Sanken electric |
2SC5249 | |
10 | C5200 |
Toshiba |
Silicon NPN Transistor | |
11 | C5200N |
Toshiba |
NPN Transistor | |
12 | C5201 |
Toshiba |
2SC5201 |