Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current www.DataSheet4U.c.
q q q
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current
www.DataSheet4U.com
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 1700 1700 6 15 30 10 200 3.5 150
–55 to +150 Unit V V V A A A W ˚C ˚C
2.7±0.3
Symbol VCBO VCES VEBO IC ICP
* IBP PC Tj Tstg
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
1:Base 2:Collector 3:Emitter TOP
–3L Package
Peak base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
*Non-repetitive
peak
s .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5240 |
Sanyo Semicon Device |
2SC5240 | |
2 | C5241 |
Shindengen Electric |
2SC5241 | |
3 | C5242 |
Toshiba Semiconductor |
2SC5242 | |
4 | C5244 |
Panasonic Semiconductor |
2SC5244 | |
5 | C5244A |
Panasonic |
2SC5244A | |
6 | C5245 |
Sanyo |
2SC5245 | |
7 | C5247 |
Hitachi Semiconductor |
2SC5247 | |
8 | C5248 |
INCHANGE |
2SC5248 | |
9 | C5249 |
Sanken electric |
2SC5249 | |
10 | C5200 |
Toshiba |
Silicon NPN Transistor | |
11 | C5200N |
Toshiba |
NPN Transistor | |
12 | C5201 |
Toshiba |
2SC5201 |