Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 /.
20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) 1.5 26.0±0.5 / 2.0±0.3 2.0 1.5 1.5 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 20.0±0.5 2.5 Solder Dip n d ge. ed Collector to 2SC5244 1500 sta tinu VCBO V le n base voltage 2SC5244A 1600 a e cyc isco Collector to 2SC5244 1500 life d, d emitter voltage 2SC5244A VCES 1600 V n u duct type Emitter to base voltage VEBO 6 V te ti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C5240 |
Sanyo Semicon Device |
2SC5240 | |
2 | C5241 |
Shindengen Electric |
2SC5241 | |
3 | C5242 |
Toshiba Semiconductor |
2SC5242 | |
4 | C5243 |
Panasonic Semiconductor |
2SC5243 | |
5 | C5244A |
Panasonic |
2SC5244A | |
6 | C5245 |
Sanyo |
2SC5245 | |
7 | C5247 |
Hitachi Semiconductor |
2SC5247 | |
8 | C5248 |
INCHANGE |
2SC5248 | |
9 | C5249 |
Sanken electric |
2SC5249 | |
10 | C5200 |
Toshiba |
Silicon NPN Transistor | |
11 | C5200N |
Toshiba |
NPN Transistor | |
12 | C5201 |
Toshiba |
2SC5201 |