DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.
• Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
0.4
–0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65
–0.15
+0.1
• Mini-Mold package EIAJ: SC-59
0.95
ORDERING INFORMATION
PART NUMBER 2SC5177-T1 QUANTITY 3 000 units/reel ARRANGEMENT Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (base) facing the perforations
2.9±0.2
2
T84
0.95
0.3
2SC5177-T2
3 000 units/reel
Marking 0.16
–0.06
+0.1
Remark .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C517 |
ETC |
NPN Transistor | |
2 | C5171 |
Toshiba Semiconductor |
2SC5171 | |
3 | C5174 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
4 | C5176 |
Toshiba |
2SC5176 | |
5 | C517A |
Siemens Semiconductor |
8-Bit CMOS Microcontroller | |
6 | C5100 |
Sanken electric |
Silicon NPN Transistor | |
7 | C5101 |
Sanken electric |
2SC5101 | |
8 | C5103 |
ROHM Electronics |
2SC5103 | |
9 | C5104 |
Panasonic |
Silicon NPN Transistor | |
10 | C5106 |
Toshiba |
2SC5106 | |
11 | C5107 |
Toshiba |
2SC5107 | |
12 | C5108 |
Toshiba |
2SC5108 |