C5107 - Toshiba

C5107 2SC5107

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO.

Features

“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-10 1 2014-03-01 2SC5107 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO VCB = 10 V, IE = 0 ⎯ IEBO VEB = 1 V, IC = 0 ⎯ hFE (Note 1) VCE = 5 V, IC = 5 mA 80 fT ⎪S21e⎪2 Cob Cre Cc･rbb’ V.