2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Bas.
eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Free Datasheet http://www.Datasheet4U.com 2SC5171 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C517 |
ETC |
NPN Transistor | |
2 | C5174 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
3 | C5176 |
Toshiba |
2SC5176 | |
4 | C5177 |
NEC |
2SC5177 | |
5 | C517A |
Siemens Semiconductor |
8-Bit CMOS Microcontroller | |
6 | C5100 |
Sanken electric |
Silicon NPN Transistor | |
7 | C5101 |
Sanken electric |
2SC5101 | |
8 | C5103 |
ROHM Electronics |
2SC5103 | |
9 | C5104 |
Panasonic |
Silicon NPN Transistor | |
10 | C5106 |
Toshiba |
2SC5106 | |
11 | C5107 |
Toshiba |
2SC5107 | |
12 | C5108 |
Toshiba |
2SC5108 |