Power Transistors 2SC4559 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-emitter voltage (Base open) VCEO φ 3.1±0.1 • Full-pack package which can be installed to the heat sink with on.
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-emitter voltage (Base open) VCEO
φ 3.1±0.1
• Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
/
■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+
–00..12
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
500
V
c type Collector-emitter voltage (E-B short) VCES
500
V
n d tage. ued Collector-emitter voltage (Base open) VCEO
400
V
le s ontin Emitter-base voltage (Collector open) VEBO
7
V
a elifecyc d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C4550 |
ETC |
OCXO | |
2 | C4551 |
NEC |
NPN Silicon Transistor | |
3 | C4552 |
Renesas |
2SC4552 | |
4 | C4553 |
NEC |
2SC4553 | |
5 | C4554 |
NEC |
2SC4554 | |
6 | C4555 |
Sanyo |
2SC4555 | |
7 | C4557 |
Allegro Micro Systems |
2SC4557 | |
8 | C4557C |
ETC |
UPC4557C | |
9 | C4558 |
Sanken Electric |
2SC4558 | |
10 | C4558C |
NEC |
UPC4558C | |
11 | C45 |
National Electronics |
SILICON CONTROLLED RECTIFIER | |
12 | C450 |
Powerex |
Phase Control SCR |