of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
large current switching at a www.DataSheet4U.com low power dissipation. In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)
*
Base current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C4550 |
ETC |
OCXO | |
2 | C4551 |
NEC |
NPN Silicon Transistor | |
3 | C4552 |
Renesas |
2SC4552 | |
4 | C4554 |
NEC |
2SC4554 | |
5 | C4555 |
Sanyo |
2SC4555 | |
6 | C4557 |
Allegro Micro Systems |
2SC4557 | |
7 | C4557C |
ETC |
UPC4557C | |
8 | C4558 |
Sanken Electric |
2SC4558 | |
9 | C4558C |
NEC |
UPC4558C | |
10 | C4559 |
Panasonic |
Silicon NPN Transistor | |
11 | C45 |
National Electronics |
SILICON CONTROLLED RECTIFIER | |
12 | C450 |
Powerex |
Phase Control SCR |