of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 5 A) VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C4550 |
ETC |
OCXO | |
2 | C4551 |
NEC |
NPN Silicon Transistor | |
3 | C4552 |
Renesas |
2SC4552 | |
4 | C4553 |
NEC |
2SC4553 | |
5 | C4555 |
Sanyo |
2SC4555 | |
6 | C4557 |
Allegro Micro Systems |
2SC4557 | |
7 | C4557C |
ETC |
UPC4557C | |
8 | C4558 |
Sanken Electric |
2SC4558 | |
9 | C4558C |
NEC |
UPC4558C | |
10 | C4559 |
Panasonic |
Silicon NPN Transistor | |
11 | C45 |
National Electronics |
SILICON CONTROLLED RECTIFIER | |
12 | C450 |
Powerex |
Phase Control SCR |