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2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3858 200 200 6 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB C.
aracteristics (Typical)
5A
V CE ( sat )
– I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 3
I C
– V BE Temperature Characteristics (Typical)
17 15 (V CE =4V)
17 15
1.
1A
7
m 00
A
m 500
A
300m
Collector Current I C (A)
A
20 0m A
2
Collector Current I C (A)
10
100mA
10
p)
Tem
125
I B =20mA
10A 5A 0 0 1 2 3 0 0
0
0
1
2
3
4
–30˚C
25˚C
I C =15A
˚C
(Case
(Ca
5
50mA
5
se
1
1 Base-Emittor Voltage V B E (V)
Temp
)
2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
(V C E =4V) 300 DC Curr ent Gain h FE DC Curr ent G.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C3851 |
Sanken electric |
Silicon NPN Epitaxial Planar Transistor |
|
| 2 | C3852 |
Sanken electric |
Silicon NPN Transistor |
|
| 3 | C3852A |
Sanken electric |
Silicon NPN Transistor |
|
| 4 | C3853 |
Sanken Electric |
Silicon NPN triple diffusion planar type Transistor |
|
| 5 | C3854 |
SavantIC |
Silicon NPN Power Transistors |
|
| 6 | C3855 |
SavantIC |
Silicon NPN Power Transistors |
|
| 7 | C3856 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor |
|
| 8 | C380 |
Powerex |
Phase Control SCR |
|
| 9 | C3802K |
Rohm |
NPN Silicon Transistor |
|
| 10 | C3803 |
Toshiba |
Silicon NPN Transistor |
|
| 11 | C3805 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|