2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Unit VCBO 80 100 V VCEO 60 80 V VEBO 6 V IC 3 A IB 1 A PC 25(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics Symbol Conditions ICBO IEBO V(BR)CEO hFE VCE(sat) .
±0.2
1.35±0.15
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45 +-00..12
2.2±0.2
2.4±0.2
BCE
Weight : Approx 2.0g a. Part No. b. Lot No.
Collector Current IC(A)
I C
– V CE Characteristics (Typical)
3 IB=12mA
8mA
5mA 2
3mA
2mA
1 1mA
0.5mA
0
0
1
2
3
4
5
6
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t )
– I B Characteristics (Typical)
1.0
1.0
0.5 0 0.001
3A 2A IC=1A
0.005 0.01
0.05 0.1
Base Current IB(A)
0.5 1
Collector Current IC(A) 125˚C (Case Temp)
–320˚5˚CC((CCaasseeTTeemmpp))
I C
– V BE Temperature Characteristics (Typi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3851 |
Sanken electric |
Silicon NPN Epitaxial Planar Transistor | |
2 | C3852A |
Sanken electric |
Silicon NPN Transistor | |
3 | C3853 |
Sanken Electric |
Silicon NPN triple diffusion planar type Transistor | |
4 | C3854 |
SavantIC |
Silicon NPN Power Transistors | |
5 | C3855 |
SavantIC |
Silicon NPN Power Transistors | |
6 | C3856 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
7 | C3858 |
Sanken electric |
Silicon NPN Triple Diffused Planar Transistor | |
8 | C380 |
Powerex |
Phase Control SCR | |
9 | C3802K |
Rohm |
NPN Silicon Transistor | |
10 | C3803 |
Toshiba |
Silicon NPN Transistor | |
11 | C3805 |
Toshiba |
Silicon NPN Transistor | |
12 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |