·With TO-3PML package ·High voltage ,high speed ·High current capability APPLICATIONS ·For use in TV horizontal output and Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Product Specification 2SC3842 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO VCE.
ctor-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 600 V 6V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain fT Transition frequency IC=5A ; VCE=5V IC=1A ; VCE=10V 10 40 32 MHz COB Output capacitance IE=0 ; VCB=10V ;f=1MHz 100 pF 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specifica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3840 |
Renesas Technology |
NPN Transistor | |
2 | C3846 |
Fujitsu |
Silicon High Speed Power Transistor | |
3 | C380 |
Powerex |
Phase Control SCR | |
4 | C3802K |
Rohm |
NPN Silicon Transistor | |
5 | C3803 |
Toshiba |
Silicon NPN Transistor | |
6 | C3805 |
Toshiba |
Silicon NPN Transistor | |
7 | C3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
8 | C3808 |
Sanyo |
NPN Epitaxial Planar Silicon Transistor | |
9 | C3811 |
Panasonic |
Silicon NPN Transistor | |
10 | C3820 |
Sanyo |
NPN Epitaxial Planar Type Silicon Transistor | |
11 | C3825 |
Panasonic |
Silicon PNP Transistor | |
12 | C3828 |
ETC |
Silicon NPN Planar Transistor |