C3649 - Sanyo

C3649 2SC3649

Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0.

Features

· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperat.