Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Rati.
· High reliability (Adoption of HVP process).
· High speed.
· High breakdown voltage.
· Adoption of MBIT process.
Package Dimensions
unit:mm 2022A
[2SC3644]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3642 |
Sanyo Semicon Device |
2SC3642 | |
2 | C3643 |
Sanyo |
2SC3643 | |
3 | C3645 |
Sanyo |
2SC3645 | |
4 | C3646 |
Sanyo |
2SC3646 | |
5 | C3647 |
Sanyo |
2SC3647 | |
6 | C3648 |
Sanyo |
2SC3648 | |
7 | C3649 |
Sanyo |
2SC3649 | |
8 | C3600 |
Sanyo |
2SC3600 | |
9 | C3605 |
Toshiba Semiconductor |
2SC3605 | |
10 | C3606 |
Toshiba |
2SC3606 | |
11 | C3607 |
Toshiba |
2SC3607 | |
12 | C3611 |
Panasonic Semiconductor |
2SC3611 |