C3358 - Unisonic Technologies

C3358 2SC3358

www.DataSheet4U.com UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR 3 HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collec.

Features

*Low Noise and High Gain
*High Power Gain 2 4 1 TO-50 1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic PT Tj Tstg RATING 20 12 3 100 250 150 -65 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain bandwidth Product Feed-Back Cap.