C3306 - INCHANGE

C3306 Silicon NPN Power Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Features

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 400V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time VCC≈ 200V , IB1= -IB2= 0.5A RL= 40Ω;PW=20μs Duty Cycle≤1% 2SC3306 MIN TYP. MAX UNIT 400 V 500 V 1.5 V 2.0 V 0.1 mA 1.0 mA 10 1.0 μs.