The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP.,.
• Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
0.5 (0.02)
1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216 MAX.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg
65
20 12 3.0 100 600 150 to +150
V V V mA mW
C C
1.27 (0.05)
2.54 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C3354 |
Panasonic |
Silicon NPN Transistor | |
2 | C3356 |
NEC |
2SC3356 | |
3 | C3358 |
Unisonic Technologies |
2SC3358 | |
4 | C3300 |
SavantIC |
2SC3300 | |
5 | C3302 |
Toshiba Semiconductor |
2SC3302 | |
6 | C3303 |
Toshiba |
2SC3303 | |
7 | C3306 |
Toshiba Semiconductor |
2SC3306 | |
8 | C3306 |
INCHANGE |
Silicon NPN Power Transistor | |
9 | C3307 |
Toshiba |
2SC3307 | |
10 | C330Cxx |
NEC Tokin |
Inductors for Switching Power Supplies | |
11 | C330Cxxxx |
Kemet Electronics |
Ceramic Leaded Capacitors | |
12 | C331 |
OKI |
Printer User Guide |