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Ordering number:EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3086] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at .
· High breakdown voltage (VCBO≥800V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3086]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300µs, Duty Cycle≤10% Tc=25˚C
800 500
7 3 6 1 1.75 40
Junction Temperature
Tj
150
Storage Temperature
Tstg
–55 to +150
E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C30807 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 2 | C30808 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 3 | C30809 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 4 | C30810 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 5 | C30817 |
RCA |
PhotoDiode |
|
| 6 | C30817E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode |
|
| 7 | C30822 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 8 | C3083 |
Sanyo |
2SC3083 |
|
| 9 | C30831 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors |
|
| 10 | C3087 |
Sanyo |
2SC3087 |
|
| 11 | C30872E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode |
|
| 12 | C3088 |
Sanyo |
2SC3088 |
|