C30831 - PerkinElmer Optoelectronics

C30831 (C30807 - C30831) N-Type Silicon PIN Photodetectors

This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated t.

Features

• Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2
• Low Operating Voltage VR = 45V
• Anti-Reflection Coated to Enhance Responsivity at 900 nm
• Hermetically-Sealed Packages
• Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types) DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation . . . . . . . . . .5 mA/mm2 Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2 Forward Current, IF: Average value, continuous operation . . . . .