This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated t.
• Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2
• Low Operating Voltage VR = 45V
• Anti-Reflection Coated to Enhance Responsivity at 900 nm
• Hermetically-Sealed Packages
• Spectral Response Range 400 to 1100 nm
Maximum Ratings, Absolute-Maximum Values (All Types)
DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation . . . . . . . . . .5 mA/mm2 Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2 Forward Current, IF: Average value, continuous operation . . . . .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C30808 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors | |
2 | C30809 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors | |
3 | C30810 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors | |
4 | C30817 |
RCA |
PhotoDiode | |
5 | C30817E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode | |
6 | C30822 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors | |
7 | C3083 |
Sanyo |
2SC3083 | |
8 | C30831 |
PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors | |
9 | C3086 |
Sanyo |
2SC3086 | |
10 | C3087 |
Sanyo |
2SC3087 | |
11 | C30872E |
Perkin Elmer Optoelectronics |
(C30xxx) PhotoDiode | |
12 | C3088 |
Sanyo |
2SC3088 |