C2929 - INCHANGE

C2929 Silicon NPN Power Transistor

·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collec.

Features

TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2929 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 IC= 1A; IB= 0.2A B 7 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage 0.3 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.9 V Collector Cutoff Current VCB= 450V; IE=0 0.1 mA .