www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.4.
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm 2003B
[2SA1207/2SC2909]
5.0 4.0 4.0
0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3
5.0
( ) : 2SA1207
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2901 |
NEC |
2SC2901 | |
2 | C2904 |
ASI |
2SC2904 | |
3 | C2905 |
Mitsubishi Electronics |
2SC2905 | |
4 | C29-F100 |
Hitachi |
Service Manual | |
5 | C2910 |
Sanyo Semicon Device |
2SC2910 | |
6 | C2911 |
Sanyo Semicon Device |
2SC2911 | |
7 | C2912 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
8 | C2921 |
Sanken |
2SC2921 | |
9 | C2922 |
Sanken electric |
2SC2922 | |
10 | C2923 |
SavantIC |
2SC2923 | |
11 | C2923 |
Panasonic |
Silicon PNP Transistor | |
12 | C2925 |
Panasonic |
2SC2925 |