LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose sAbsolute maximum ratings Symbol 2SC2921 VCBO 160 VCEO 160 VEBO IC IB PC Tj Tstg 5 15 4 150(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions 2SC2921 Unit I.
pprox 18.4g a. Type No. b. Lot No.
Collector Current IC(A) 750mA
I C
– V CE Characteristics (Typical)
15
600mA 500mA
400mA
300mA
200mA 10 150mA
100mA
5 50mA
IB=20mA
0 0 12 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t )
– I B Characteristics (Typical)
3
I C
– V BE Temperature Characteristics (Typical)
(VCE=4V) 15
Collector Current IC(A)
–235˚0˚1C2C5(˚CC (asCeasTeeTmepm)p)
2 10
1
IC=10A 5A
0
0
0.2 0.4 0.6 0.8
1.0
Base Current IB(A)
5
0 012 Base-Emittor Voltage VBE(V)
Transient Thermal Resistance θ j-a( ˚ C / W )
DC Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2922 |
Sanken electric |
2SC2922 | |
2 | C2923 |
SavantIC |
2SC2923 | |
3 | C2923 |
Panasonic |
Silicon PNP Transistor | |
4 | C2925 |
Panasonic |
2SC2925 | |
5 | C2926 |
Rohm |
2SC2926 | |
6 | C2929 |
ETC |
2SC2929 | |
7 | C2929 |
INCHANGE |
Silicon NPN Power Transistor | |
8 | C29-F100 |
Hitachi |
Service Manual | |
9 | C2901 |
NEC |
2SC2901 | |
10 | C2904 |
ASI |
2SC2904 | |
11 | C2905 |
Mitsubishi Electronics |
2SC2905 | |
12 | C2909 |
Sanyo Semicon Device |
2SC2909 |