Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 1.5 3.0 .
· Adoption of FBET process.
· High breakdown voltage.
· Good linearity of hFE and small Cob.
· Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2910 |
Sanyo Semicon Device |
2SC2910 | |
2 | C2912 |
Sanyo |
Epitaxial Planar Silicon Transistor | |
3 | C29-F100 |
Hitachi |
Service Manual | |
4 | C2901 |
NEC |
2SC2901 | |
5 | C2904 |
ASI |
2SC2904 | |
6 | C2905 |
Mitsubishi Electronics |
2SC2905 | |
7 | C2909 |
Sanyo Semicon Device |
2SC2909 | |
8 | C2921 |
Sanken |
2SC2921 | |
9 | C2922 |
Sanken electric |
2SC2922 | |
10 | C2923 |
SavantIC |
2SC2923 | |
11 | C2923 |
Panasonic |
Silicon PNP Transistor | |
12 | C2925 |
Panasonic |
2SC2925 |