C2717 - Toshiba

C2717 2SC2717

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm · High gain: Gpe = 33dB (typ.) (f = 45 MHz) · Good linearity of hFE. Maximum Ratings (Ta = 25°C) Characteristics 2SC2216 Collector-base voltage 2SC2717 Collector-emitter voltage 2SC2216 2SC2717 Emitter-base voltage.

Features

Transition frequency Power gain (Figure 1) 2SC2216 2SC2717 Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE VCE = 12.5 V, IC = 12.5 mA VCE (sat) VBE (sat) Cob Cc･rbb’ fT Gpe IC = 15 mA, IB = 1.5 mA IC = 15 mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 30 MHz VCB = 10 V, IE = -1 mA, f = 30 MHz VCE = 12.5 V, IC = 12.5 mA VCC = 12.5 V, IE = -12.5 mA, f = 45 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 45 ¾ ¾ 25 ¾ ¾ V 40 ¾ 140 40 ¾ 240 ¾ ¾ 0.2 V ¾ ¾ 1.5 V 0.8 ¾ 2.0 pF ¾ ¾ 25 ps 300 ¾ ¾ MHz 29 ¾ 36 dB 28 ¾ 36 1.