Silicon Epitaxial Planar Transistor FEATURES z High power gain z Recommended for FM IF,OSC stage and AM CONV.IF stage Pb Lead-free APPLICATIONS z High Frequency Amplifier Applications Production specification 2SC2715 ORDERING INFORMATION Type No. Marking 2SC2715 RR1/RO1/RY1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specif.
z High power gain z Recommended for FM IF,OSC stage and AM CONV.IF stage Pb Lead-free APPLICATIONS z High Frequency Amplifier Applications Production specification 2SC2715 ORDERING INFORMATION Type No. Marking 2SC2715 RR1/RO1/RY1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 35 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 4 IC Collector Current -Continuous 50 IB Base current 10 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2710 |
Toshiba |
2SC2710 | |
2 | C2712 |
Toshiba |
Silicon NPN Transistors | |
3 | C2712 |
Weitron Technology |
2SC2712 | |
4 | C2712 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR | |
5 | C2713 |
Toshiba |
2SC2713 | |
6 | C2714 |
Toshiba |
2SC2714 | |
7 | C2717 |
Toshiba |
2SC2717 | |
8 | C2719 |
Hamamatsu |
Photosensor Amplifier | |
9 | C271C |
NEC |
UPC271 | |
10 | C2703 |
Toshiba |
2SC2703 | |
11 | C2705 |
Toshiba Semiconductor |
2SC2705 | |
12 | C2721 |
NEC |
2SC2721 |