TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm • High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature S.
E = 2 V, IC = 100 mA VCB = 10 V, f = 1 MHz
Note: hFE (1) classification O: 100 to 200, Y: 160 to 320
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
30 ― ―
V
100 ― 320
40 ― ―
― ― 0.5 V
― 0.9 1.5
V
― 150 ― MHz
― 13 ― pF
1 2004-07-07
Marking
C2703 Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2SC2703
2 2004-07-07
Collector current IC (mA)
1200 Common emitter
Ta = 25°C 1000
IC
– VCE
9 8
800
600
400
7 6
5 4
3 2
IB = 1 mA 200
0 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C2705 |
Toshiba Semiconductor |
2SC2705 | |
2 | C2710 |
Toshiba |
2SC2710 | |
3 | C2712 |
Toshiba |
Silicon NPN Transistors | |
4 | C2712 |
Weitron Technology |
2SC2712 | |
5 | C2712 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR | |
6 | C2713 |
Toshiba |
2SC2713 | |
7 | C2714 |
Toshiba |
2SC2714 | |
8 | C2715 |
GME |
Silicon Epitaxial Planar Transistor | |
9 | C2717 |
Toshiba |
2SC2717 | |
10 | C2719 |
Hamamatsu |
Photosensor Amplifier | |
11 | C271C |
NEC |
UPC271 | |
12 | C2721 |
NEC |
2SC2721 |