·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC1942 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emi.
ining voltage IC=0.1A ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A ICBO Collector cut-off current VCB=600V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=1 A ; VCE=5V Product Specification 2SC1942 MIN TYP. MAX UNIT 800 V 6V 5.0 V 1.5 V 10 µA 10 µA 8 40 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC1942 Fig.2 Outline dimensions 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C1941 |
NEC |
2SC1941 | |
2 | C1945 |
Mitsubishi Electronics |
2SC1945 | |
3 | C1946 |
Mitsubishi Electric Semiconductor |
2SC1946 | |
4 | C1946A |
Mitsubishi Electric Semiconductor |
2SC1946A | |
5 | C1947 |
Mitsubishi Electric Semiconductor |
2SC1947 | |
6 | C1949 |
ETC |
NPN Silicon Transistor | |
7 | C1904 |
SavantIC |
2SC1904 | |
8 | C1906 |
Hitachi Semiconductor |
2SC1906 | |
9 | C1907 |
Hitachi Semiconductor |
2SC1907 | |
10 | C1907 |
Renesas |
Silicon NPN Transistor | |
11 | C1921 |
Hitachi Semiconductor |
2SC1921 | |
12 | C1923 |
Toshiba Semiconductor |
2SC1923 |