·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC PD Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC).
turation voltage IC=10mA ;IB=1mA VBEsat Base-emitter saturation voltage IC=10mA ;IB=1mA ICBO Collector cut-off current VCB=140V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=10mA ; VCE=5V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=10mA ; VCE=5V MIN TYP. MAX UNIT 150 V 150 V 5V 0.5 V 1.0 V 1 µA 1 µA 35 500 3 pF 70 MHz 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SC1904 Fig.2 Outline dimensions 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | C1906 |
Hitachi Semiconductor |
2SC1906 | |
2 | C1907 |
Hitachi Semiconductor |
2SC1907 | |
3 | C1907 |
Renesas |
Silicon NPN Transistor | |
4 | C1921 |
Hitachi Semiconductor |
2SC1921 | |
5 | C1923 |
Toshiba Semiconductor |
2SC1923 | |
6 | C1941 |
NEC |
2SC1941 | |
7 | C1942 |
SavantIC |
2SC1942 | |
8 | C1945 |
Mitsubishi Electronics |
2SC1945 | |
9 | C1946 |
Mitsubishi Electric Semiconductor |
2SC1946 | |
10 | C1946A |
Mitsubishi Electric Semiconductor |
2SC1946A | |
11 | C1947 |
Mitsubishi Electric Semiconductor |
2SC1947 | |
12 | C1949 |
ETC |
NPN Silicon Transistor |