C1923 - Toshiba Semiconductor

C1923 2SC1923

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm · Small reverse transfer capacitance: Cre = 0.7 pF (typ.) · Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector.

Features

A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (
* NF = 5.0dB max) Min Typ. Max Unit ¾ ¾ 0.5 mA ¾ ¾ 0.5 mA 40 ¾ 200 ¾ 0.70 ¾ pF ¾ 550 ¾ MHz ¾ ¾ 30 ps ¾ 2.5 4.0
* dB 15 18 ¾ dB 1 2003-03-19 2SC1923 L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 LENGTH Figure 1 NF, Gpe Test Circuit y Parameter (typ.) (1) Common emitter (VCE = 6 V, IE = -1 mA, f = 100 MHz) Characteristics Symbol Typ. Unit Input conductance Input cap.