isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed especially for applications such as switching regulators, switching c.
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·High Input Impedance
·Low Drive Requirements
·Majority Carrier Device
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
IDM
Drain Current-Single Plused
40
A
Ptot
Total D.
BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ.
SIPMOS ® Power Transistor BUZ 72 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ70 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ70L |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ71 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | BUZ71 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ71 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | BUZ71 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
7 | BUZ71 |
Comset Semiconductors |
N-Channel Enhancement Mode Power MOS Transistors | |
8 | BUZ71 |
INCHANGE |
N-Channel MOSFET | |
9 | BUZ71A |
STMicroelectronics |
N-Channel MOSFET | |
10 | BUZ71A |
Siemens Semiconductor Group |
Power Transistor | |
11 | BUZ71A |
Intersil Corporation |
N-Channel Power MOSFET | |
12 | BUZ71A |
Harris |
N-Channel Power MOSFET |