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BUZ72 N-Channel MOSFET

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed especially for applications such as switching regulators, switching c.

Features


·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·High Input Impedance
·Low Drive Requirements
·Majority Carrier Device
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A IDM Drain Current-Single Plused 40 A Ptot Total D.

The same part from a different manufacturer

Datasheet BUZ72 - Siemens Semiconductor Group BUZ72

BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ.

Datasheet BUZ72 - Infineon Technologies AG BUZ72

SIPMOS ® Power Transistor BUZ 72 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type .

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