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BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ45A Voss 500 V RoS(on) 0.8 n 10 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCH MODE POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transi.
500 V 500 V ±20 V 8.3 A 33 A 125 W -55 to 150 °C 150 °C C 55/150/56 1/4 211 BUZ45A THERMAL DATA Rthi - case Thermal resistance junction-case max Rthj _amb Thermal resistance junction-ambient max ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions 1.0 °CIW 35 °CIW OFF V(BR) oss Drain-source breakdown voltage 10= 250/-tA VGs= 0 500 loss Zero gate voltage Vos= Max Rating drain current (VGS = 0) Vos= Max Rating Tj = 125°C IGSS Gate-body leakage current (Vos = 0) VGs= ±20 V V 250 /-t A 1000 /-t A ±100 nA ON VGS (th.
BUZ45A - Intersil Corporation
BUZ45A Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Featu.
BUZ45A - INCHANGE
isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissip.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUZ45 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 2 | BUZ45 |
STMicroelectronics |
N-Channel MOSFET |
|
| 3 | BUZ45 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | BUZ45B |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | BUZ45B |
INCHANGE |
N-Channel MOSFET |
|
| 6 | BUZ40 |
Siemens Semiconductor Group |
Power Transistor |
|
| 7 | BUZ40B |
Siemens Semiconductor Group |
Power Transistor |
|
| 8 | BUZ40B |
INCHANGE |
N-Channel MOSFET |
|
| 9 | BUZ41A |
Siemens Semiconductor Group |
Power Transistor |
|
| 10 | BUZ41A |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 11 | BUZ41A |
STMicroelectronics |
N-Channel MOSFET |
|
| 12 | BUZ41A |
INCHANGE |
N-Channel MOSFET |
|