BUZ45 - INCHANGE

BUZ45 N-Channel MOSFET

isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUZ45 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters,.

Features

·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)
·SOA is Power Dissipation Limited
·High speed switching
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃.