BUZ41A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ41A Voss 500 V ROS(on) 1.5 D 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE - FOR REDUCED COST AND COST INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transist.
A 18 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 199 BUZ41A THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient max 1.67 °CIW max 75 °CIW ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) oss Drain-source breakdown voltage 10= 250 p,A VGs= 0 500 loss Zero gate voltage Vos= Max Rating drain current (VGS = 0) Vos= Max Rating Tj = 125°C IGSS Gate-body leakage current (Vos = 0) VGs= ±20 V V 250 p,A 1000 p,A ±100 nA ON VGS (th) Gate threshold voltage Ros (on) St.
BUZ 41 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type B.
BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Featu.
isc N-Channel Mosfet Transistor BUZ41A ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Lin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ40 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ40B |
Siemens Semiconductor Group |
Power Transistor | |
3 | BUZ40B |
INCHANGE |
N-Channel MOSFET | |
4 | BUZ42 |
Siemens Semiconductor Group |
Power Transistor | |
5 | BUZ42 |
Intersil Corporation |
N-Channel Power MOSFET | |
6 | BUZ42 |
STMicroelectronics |
N-Channel MOSFET | |
7 | BUZ42 |
INCHANGE |
N-Channel MOSFET | |
8 | BUZ44A |
Siemens Semiconductor Group |
Power Transistor | |
9 | BUZ44A |
INCHANGE |
N-Channel MOSFET | |
10 | BUZ45 |
Intersil Corporation |
N-Channel Power MOSFET | |
11 | BUZ45 |
STMicroelectronics |
N-Channel MOSFET | |
12 | BUZ45 |
INCHANGE |
N-Channel MOSFET |