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BUZ41A - STMicroelectronics

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BUZ41A N-Channel MOSFET

BUZ41A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ41A Voss 500 V ROS(on) 1.5 D 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT<100KHz • EASY DRIVE - FOR REDUCED COST AND COST INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transist.

Features

A 18 A 75 W -55 to 150 °C 150 °C E 55/150/56 1/4 199 BUZ41A THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient max 1.67 °CIW max 75 °CIW ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) oss Drain-source breakdown voltage 10= 250 p,A VGs= 0 500 loss Zero gate voltage Vos= Max Rating drain current (VGS = 0) Vos= Max Rating Tj = 125°C IGSS Gate-body leakage current (Vos = 0) VGs= ±20 V V 250 p,A 1000 p,A ±100 nA ON VGS (th) Gate threshold voltage Ros (on) St.

The same part from a different manufacturer

Datasheet BUZ41A - Siemens Semiconductor Group BUZ41A

BUZ 41 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type B.

Datasheet BUZ41A - Intersil Corporation BUZ41A

BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Featu.

Datasheet BUZ41A - INCHANGE BUZ41A

isc N-Channel Mosfet Transistor BUZ41A ·FEATURES ·SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Lin.

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