BUZ350 - Siemens Semiconductor Group

BUZ350 Power Transistor

BUZ 350 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 350 VDS 200 V ID 22 A RDS(on) 0.12 Ω Package TO-218 AA Ordering Code C67078-S3117-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 Unit A ID IDpuls 88 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche cur.

Features

min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.09 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.12 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 14 A Semiconductor Group 2 07/96 BUZ 350 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynam.