BUZ354 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDs(on) ID BUZ354 500 V 0.8 G 8A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • HIGH CURRENT - 8A FOR UP TO 200W SMPS • ULTRA FAST SWITCHING - FOR OPERATION AT < 100KHz • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOT.
N humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
June 1988
500
V
500
V
±20
V
8
A
32
A
125
W
-55 to 150
°C
150
°C
E
551150/56
1/4
257
BUZ354
THERMAL DATA Rthj _ case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient
max max
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
1.0 °CIW 45 °CIW
OFF
,-,
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUZ35 |
Siemens Semiconductor Group |
Power Transistor | |
2 | BUZ35 |
INCHANGE |
N-Channel MOSFET | |
3 | BUZ350 |
Siemens Semiconductor Group |
Power Transistor | |
4 | BUZ350 |
Infineon Technologies AG |
Power Transistor | |
5 | BUZ351 |
Siemens Semiconductor Group |
Power Transistor | |
6 | BUZ351 |
Intersil Corporation |
N-Channel Power MOSFET | |
7 | BUZ353 |
Siemens Semiconductor Group |
Power Transistor | |
8 | BUZ353 |
STMicroelectronics |
N-Channel MOSFET | |
9 | BUZ355 |
Siemens Semiconductor Group |
Power Transistor | |
10 | BUZ356 |
Siemens Semiconductor Group |
Power Transistor | |
11 | BUZ357 |
Siemens Semiconductor Group |
Power Transistor | |
12 | BUZ358 |
Siemens Semiconductor Group |
Power Transistor |