BUZ350 Infineon Technologies AG Power Transistor Datasheet, en stock, prix

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BUZ350

Infineon Technologies AG
BUZ350
BUZ350 BUZ350
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Part Number BUZ350
Manufacturer Infineon (https://www.infineon.com/) Technologies AG
Description SIPMOS ® Power Transistor BUZ 350 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 22 A RDS(on) 0.12 Ω Package Ordering Code BUZ 350 TO-218 AA...
Features ymbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 14 A Ω 0.09 0.12 Data Sheet 2 05.99 BUZ 350 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol ...

Document Datasheet BUZ350 Data Sheet
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