BUW64B - Inchange Semiconductor

BUW64B Silicon NPN Power Transistors

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUW64A = 110V(Min)- BUW64B = 130V(Min)- BUW64C ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching cir.

Features

o Case MAX 2.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW64A BUW64B BUW64C IC= 10mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage BUW64A/B IC= 5A; IB= 0.5A BUW64C IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage BUW64A/B IC= 5A; IB= 0.5A BUW64C IC= 4A; IB= 0.4A BUW64A Collect.