BUW13AW - NXP

BUW13AW Silicon diffused power transistors

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge BUW13W; BUW13AW APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (SOT429) and symbol. 1 2 3 MBK117 2 1 MBB008 3 QUICK REFERE.

Features

00 450 1.5 15 30 175 0.8 V V V A A W µs VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 0.7 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW13W BUW13AW VCEO collector-emitter voltage BUW13W BUW13AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base .