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·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitte.
TIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A; IB= 1.6A VCE= 1000V; VBE= 0 VCE= 1000V; VBE= 0;TC=125℃ VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 20mA ; VCE= 5V hFE-2 DC Current Gain IC= 1.5A ; VCE= 5V Switching Times ;Resistive Load ton Turn-on Time ts Storage Time IC= 8A;IB1= -IB2= 1.6A tf Fall Time MIN TYP. MAX UNIT 450 V 1.5 V 1.6 V 1 4 mA 10 mA 10 35 10 35 1.0 μs 4.0.
BUW13AF - NXP
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverte.
BUW13AF - SavantIC
·With TO-3PFa package www.datasheet4u.com ·High voltage;high speed APPLICATIONS ·Converters ·Inverters ·Switching regula.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUW13A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BUW13A |
Comset Semiconductors |
High Speed Power Transistor |
|
| 3 | BUW13A |
INCHANGE |
NPN Transistor |
|
| 4 | BUW13AW |
NXP |
Silicon diffused power transistors |
|
| 5 | BUW13AW |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BUW13 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BUW13 |
Comset Semiconductors |
High Speed Power Transistor |
|
| 8 | BUW13 |
INCHANGE |
NPN Transistor |
|
| 9 | BUW131 |
INCHANGE |
NPN Transistor |
|
| 10 | BUW131A |
INCHANGE |
NPN Transistor |
|
| 11 | BUW131H |
INCHANGE |
NPN Transistor |
|
| 12 | BUW132 |
INCHANGE |
NPN Transistor |
|