· High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 430V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0.
RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1A VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=100℃ VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitance Switching Times , Resistive Load IC= 15A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz ton Turn-On T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUW133 |
INCHANGE |
NPN Transistor | |
2 | BUW133A |
INCHANGE |
NPN Transistor | |
3 | BUW13 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | BUW13 |
Comset Semiconductors |
High Speed Power Transistor | |
5 | BUW13 |
INCHANGE |
NPN Transistor | |
6 | BUW131 |
INCHANGE |
NPN Transistor | |
7 | BUW131A |
INCHANGE |
NPN Transistor | |
8 | BUW131H |
INCHANGE |
NPN Transistor | |
9 | BUW132 |
INCHANGE |
NPN Transistor | |
10 | BUW132A |
INCHANGE |
NPN Transistor | |
11 | BUW132H |
INCHANGE |
NPN Transistor | |
12 | BUW13A |
SavantIC |
SILICON POWER TRANSISTOR |