BUW133 - INCHANGE

BUW133 NPN Transistor

·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 .

Features

25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.7A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.3A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1.3A VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=100℃ VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitance Switching Times , Resistive Load IC= 15A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz ton Turn-On Time tstg S.