·With TO-3PN package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Designed for switching and industrial applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base vol.
RISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=6A; IB=1.5A IC=10A; IB=4A IC=6A; IB=1.5A IC=10A; IB=4A VCE=1200V ;VBE=0 T=125°C VCE=600V; IC=0 VEB=6V; IC=0 IC=1A ; VCE=5V 15 MIN 600 1.5 3 1.5 2 0.5 3 1 1 50 TYP. MAX UNIT V V V V V mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1.
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switching Speed ·Minimum L.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUV48 |
Motorola Inc |
SWITCHMODE II Series NPN Silicon Power Transistors | |
2 | BUV48 |
ON Semiconductor |
SITCHMODE II Series NPN Silicon Power Transistors | |
3 | BUV48 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
4 | BUV48 |
INCHANGE |
NPN Transistor | |
5 | BUV48A |
STMicroelectronics |
High voltage fast switching NPN power transistor | |
6 | BUV48A |
Motorola Inc |
SWITCHMODE II Series NPN Silicon Power Transistors | |
7 | BUV48A |
ON Semiconductor |
SITCHMODE II Series NPN Silicon Power Transistors | |
8 | BUV48A |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
9 | BUV48A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | BUV48A |
Multicomp |
Power Transistor | |
11 | BUV48AFI |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTORS | |
12 | BUV48AFI |
Inchange Semiconductor |
Silicon NPN Power Transistor |