BUV48, BUV48A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 15 A Continuous Collector Current 1000 Volt Blocking Capability B SOT-93 PACKAGE (TOP VIEW) 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximu.
450 15 30 4 20 55 125 -65 to +150 -65 to +150 UNIT V V V A A A A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUV48, BUV48A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) Collector-emitter sustaining voltage Collector-emitter cut-off current IC = 200 mA VCE = 850.
·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV48/D SWITCHMODE II Series NPN Silicon Power Transisto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUV41 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BUV42 |
ST Microelectronics |
SILICON NPN SWITCHING TRANSISTOR | |
3 | BUV42 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | BUV42 |
Seme LAB |
Bipolar NPN Device | |
5 | BUV42A |
Seme LAB |
Bipolar NPN Device | |
6 | BUV46 |
STMicroelectronics |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS | |
7 | BUV46 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | BUV46A |
STMicroelectronics |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS | |
9 | BUV46A |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | BUV46A |
INCHANGE |
NPN Transistor | |
11 | BUV46AFI |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | BUV46FI |
Inchange Semiconductor |
Silicon NPN Power Transistor |